DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
μ PA2757GR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2757GR is Dual N-channel MOS Field Effect
Transistors designed for switching application.
FEATURES • Low on-state resistance
RDS(on)1 = 36.
0 mΩ MAX.
(VGS = 10 V, ID = 3.
0 A) RDS(on)2 = 50.
0 mΩ MAX.
(VGS = 4.
5 V, ID = 3.
0 A) • Low gate charge QG = 10 nC TYP.
(VGS = 10 V) • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
85
1 : Source 1 2 : Gate 1 7, 8 : Drain 1
3 : Source 2 4 : Gate 2 5, 6 : Drain 2
14 5.
37 MAX.
6.
0 ± 0.
3 4.
4
0.
8
+0.
10 –0.
05
0.
15
1.
27 0.
78 MAX.
0.
5 ± 0.
2
0.
10
1.
8 MAX.
0.
05 MIN.
1.
44
ORDERING INFORMATION
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