DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
μ PA2755AGR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2755AGR is Dual N-channel MOS Field Effect
Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES • Dual chip type • Low on-state resistance
RDS(on)1 = 18 mΩ MAX.
(VGS = 10 V, ID = 4.
0 A) RDS(on)2 = 29 mΩ MAX.
(VGS = 4.
5 V, ID = 4.
0 A) • Low input capacitance Ciss = 650 pF TYP.
• Built-in G-S protection diode • Small and surface mount package (Power SOP8)
1.
8 MAX.
1.
44
0.
05 MIN.
PACKAGE DRAWING (Unit: mm)
85
14 5.
37 MAX.
1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2
6.
0 ±0.
3 4.
4
0.
8
+0.
10 –0.
05
0.
1...