DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
μ PA2791GR
SWITCHING N- AND P-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect
Transistors designed for switching application.
FEATURES • Low on-state resistance
N-channel RDS(on)1 = 36.
0 mΩ MAX.
(VGS = 10 V, ID = 3.
0 A) RDS(on)2 = 50.
0 mΩ MAX.
(VGS = 4.
5 V, ID = 3.
0 A)
P-channel RDS(on)1 = 82 mΩ MAX.
(VGS = −10 V, ID = −3.
0 A) RDS(on)2 = 110 mΩ MAX.
(VGS = −4.
5 V, ID = −3.
0 A)
• Low gate charge N-channel QG = 10 nC TYP.
(VGS = 10 V) P-channel QG = 8.
3 nC TYP.
(VGS = −10 V)
• Built-in gate protection diode • Small and surface mount package (Power SOP8)
1.
8 MAX.
1.
44
0.
05 MIN.
PACKAGE DRAWING (Unit: mm)
85
N-ch...