2SK1161, 2SK1162
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching
regulator and DC-DC converter
Outline
TO-3P
D G1
2 3 1.
Gate 2.
Drain (Flange)
S 3.
Source
2SK1161, 2SK1162
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1161
2SK1162
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C
Symbol VDSS
VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 450 500 ±3...