2SK3078
TOSHIBA FIELD EFFECT
TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3078
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.
These TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
Unit: mm
z Output Power z Gain z Drain Efficiency
: PO = 27.
0 dBmW (Min.
) : GP = 12.
5 dB (Min.
) : ηD = 46% (Typ.
)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage Gate-Source Voltage Drain C...