HiPerFETTM Power MOSFETs Single Die MOSFET IXFX 50N50 IXFX 55N50 VDSS ID25 500 V 50 A 500 V 55 A t rr ≤ 250 ns RDS(on) 100 mΩ 80 mΩ Preliminary data sheet Symbol V DSS VDGR V GS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ T JM Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque 50N50 55N50 50N50 55N50 50N50 55N50 500 V 500 V ±20 V ±30 V 50 A 55 A 200 A 220 A 50 A 55 A 60 mJ 3J 5 V/ns 520 W -55 .
.
.
+150 150 -55 .
.
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