PE636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 33A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 33 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 21 10 Pulsed Drain Current1 TA= 70 °C IDM 8 100 Avalanche Current IAS 20 Avalanche Energy L =0.
1mH EAS 20 TC = 25 °C 17.
8 Power Dissipation TC = 100 °C TA = 25 °C PD 7 1.
7 TA = 70 °C 1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SY...

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