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Part Number
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FDS9933BZ |
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Manufacturer
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Fairchild Semiconductor |
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Description
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Dual P-Channel 2.5V Specified PowerTrench MOSFET |
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Published
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Dec 28, 2015 |
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Detailed Description
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FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench® MOSFET
March 2008
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTr...
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Datasheet
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FDS9933BZ
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Overview
FDS9933BZ Dual P-Channel 2.
5V Specified PowerTrench® MOSFET
March 2008
FDS9933BZ
Dual P-Channel 2.
5V Specified PowerTrench® MOSFET
tm
-20V, -4.
9A, 46mΩ
Features
General Description
Max rDS(on) = 46mΩ at VGS = -4.
5V, ID = -4.
9A Max rDS(on) = 69mΩ at VGS = -2.
5V, ID = -4.
0A Low gate charge (11nC typical).
High performance trench technology for extremely low rDS(on).
HBM ESD protection level 3kV (Note 3).
RoHS Compliant
These P-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These...
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