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Part Number
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IRF7307QPBF |
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Manufacturer
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International Rectifier |
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Description
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Power MOSFET |
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Published
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Dec 28, 2015 |
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Detailed Description
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IRF7307QPbF
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance l Dual N and P Channel MOSFE...
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Datasheet
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IRF7307QPBF
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Overview
IRF7307QPbF
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance l Dual N and P Channel MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
l Surface Mount
G1 2
7 D1
l Available in Tape & Reel l 150°C Operating Temperature
S2 3
6 D2
VDSS
20V
-20V
l Lead-Free
G2 4
5 D2
P-CHANNEL MOSFET
Description
Top View
RDS(on) 0.
050Ω 0.
090Ω
These HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.
These benefits c...
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