Part Number
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IRF7343QPbF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Dec 28, 2015 |
Detailed Description
|
PD - 96110A
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Ava...
|
Datasheet
|
IRF7343QPbF
|
Overview
PD - 96110A
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristic...
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