PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 7N80P IXFI 7N80P IXFP 7N80P VDSS = 800 ID25 = 7 RDS(on) ≤ 1.
44 t rr ≤ 250 V A Ω ns Symbol VDSS VDGR VGS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-220, TO-3P) TO-220 TO-263 Maximum Ratings 800 V 800 V ± 30 V ± 40 V 7A 18 A 4A 20 mJ 300 ...

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