Part Number
|
IRFR120Z |
Manufacturer
|
International Rectifier |
Description
|
AUTOMOTIVE MOSFET |
Published
|
Jan 13, 2016 |
Detailed Description
|
AUTOMOTIVE MOSFET
Features
● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast...
|
Datasheet
|
IRFR120Z
|
Overview
AUTOMOTIVE MOSFET
Features
● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax
G
PD - 94754
IRFR120Z IRFU120Z
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 190mΩ
ID = 8.
7A
S
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in A...
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