FDD107AN06LA0 January 2004 FDD107AN06LA0 N-Channel PowerTrench® MOSFET 60V, 10A, 107mΩ Features • rDS(ON) = 92mΩ (Typ.
), VGS = 5V, ID = 10A • Qg(tot) = 4.
2nC (Typ.
), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 83524 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN (FLANGE) D GATE SOURCE TO-252AA FDD SERIES G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain ...

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