FDU8880 May 2008 FDU8880 N-Channel PowerTrench® MOSFET 30V, 58A, 10mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Applications • DC/DC converters tm Features • rDS(ON) = 10mΩ, VGS = 10V, ID = 35A • rDS(ON) = 13mΩ, VGS = 4.
5V, ID = 35A • High performance trench technology for extremely low rDS(ON) • Low gate charge • High power and current handling capability D GDS I-PAK (TO-251AA) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS...

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