MCH3477 Power MOSFET 20V, 38mΩ, 4.
5A, Single N-Channel www.
onsemi.
com Features  High Speed Switching  1.
8V Drive  ESD Diode-Protected Gate  Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW10s, duty cycle1% IDP Power Dissipation When mounted on ceramic substrate (900mm20.
8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm20.
8mm) Symbol RJA Value 20 12 4.
5 18 Unit V V A A 1.
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