NTTFS4965NF
Power MOSFET
30 V, 64 A, Single N−Channel, WDFN8
Features
• Integrated
Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery • Synchronous Rectification for DC−DC Converters • Low Side Switching • Telecom Secondary Side Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
http://onsemi.
com
V(BR)DSS 30 V
RDS(on) MAX 3.
5 mW @ 10 V 5.
2 mW @ 4.
5 V
ID MAX 64 A
N−Channel MOSFET D
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current...