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MBR1090-M3, MBR10100-M3
Vishay General Semiconductor
High Voltage Trench MOS Barrier
Schottky Rectifier
TMBS®
TO-220AC
PIN 1 PIN 2
2 1
CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max.
Package
10 A 90 V, 100 V
150 A 0.
65 V 150 °C TO-220AC
Diode variations
Single die
FEATURES • Trench MOS
Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, fr...