HUF75344A3 N-Channel UltraFET Power MOSFET
October 2007
HUF75344A3
N-Channel UltraFET Power MOSFET
55V, 75A, 8mΩ
tm
Features
• RDS(on) = 6.
5mΩ ( Typ.
)@ VGS = 10V, ID = 75A • RoHS compliant
Description
• This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change.
It was designed for use in applications where power efficiency is important, such as switching
regulators, switch...