SCH1345 Power MOSFET –20V, 49mΩ, –4.
5A, Single P-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance.
This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.
Features • Low On-Resistance • 1.
5V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance Typical Applications • Load Switch • LCD Drive Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS −20 V Gate to Source Voltage VGSS ±10 V Drain Current (DC)...

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