eorex EM48AM1684VTH 256Mb (4M×4Bank×16) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.
3V ±0.
3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Latency (C/L) - 2 or 3 • Data Mask (DQM) for Read / Write Masking • Programmable Wrap Sequence – Sequential (B/L = 1/2/4/8/full Page) – Interleave (B/L = 1/2/4/8) • Burst Read with Single-bit Write Operation • All Inputs are Sampled at the Rising Edge of the System Clock • Auto Refresh and Self Refresh • 8,192 Refresh Cycles / 64ms (7.
8us) Description The EM48AM1684VTH is Synchronous Dynamic Random Access Memory (SDRAM) organiz...

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