6HP04MH Ordering number : ENA0368 6HP04MH Features • 4V drive.
P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.
8mm) Ratings --60 ±20 --120 --480 0.
6 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff V...

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