BCX70GLT1
General Purpose
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
45 Vdc 45 Vdc 5.
0 Vdc 200 mAdc
Characteristic
Total Device Dissipation FR− 5 Board(1) TA = 25°C Derate above 25°C
Symbol PD
Max 225
1.
8
Unit mW
mW/°C
Thermal Resistance, Junction to Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C
PD 300 mW 2.
4 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150
°C
ELECTRICAL CHARACTERISTICS ...