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CEB06N7

N-Channel Enhancement Mode Field Effect Transistor

Description

CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP06N7 CEB06N7 CEF06N7 VDSS 700V 700V 700V RDS(ON) 2Ω 2Ω 2Ω ID @VGS 6A 10V 6A 10V 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES T...


CET

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