CEP08N6A/CEB08N6A
CEF08N6A
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP08N6A CEB08N6A CEF08N6A
VDSS 600V 600V
600V
RDS(ON) 1.
25Ω 1.
25Ω
1.
25Ω
ID 7.
5A 7.
5A 7.
5A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC ...