CEP12N65/CEB12N65
CEF12N65
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP12N65 CEB12N65 CEF12N65
VDSS 650V 650V
650V
RDS(ON) 0.
73Ω 0.
73Ω
0.
73Ω
ID 12A 12A 12A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS VGS ID IDM e
650
±30
12 48
12 d 48d
Maximum Powe...