Part Number
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Si9959DY |
Manufacturer
|
TEMIC |
Description
|
Dual N-Channel Enhancement-Mode MOSFET |
Published
|
Jan 25, 2016 |
Detailed Description
|
Si9959DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) 60
rDS(on) (W) 0.30 @ VGS = 10 V 0.50 @ VGS =...
|
Datasheet
|
Si9959DY
|
Overview
Si9959DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) 60
rDS(on) (W) 0.
30 @ VGS = 10 V 0.
50 @ VGS = 5 V
ID (A) "2.
0 "0.
6
For higher performance see Si9945DY
D1 D1
D2 D2
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
G1 G2
Top View
S1 S2
N-Channel MOSFET
N-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
60 "20 "...
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