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IPB120N04S4L-02

Part Number IPB120N04S4L-02
Manufacturer Infineon
Description Power-Transistor
Published Jan 26, 2016
Detailed Description Data Sheet IPB120N04S4L-02 OptiMOSTM-T2 Power-Transistor Features • N-channel Logic Level - Enhancement mode • AEC qua...
Datasheet IPB120N04S4L-02





Overview
Data Sheet IPB120N04S4L-02 OptiMOSTM-T2 Power-Transistor Features • N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 1.
7 mΩ 120 A PG-TO263-3-2 Type IPB120N04S4L-02 Package PG-TO263-3- Marking 4N04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS - ...






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