Silicon N-Channel Power MOSFET
CS8N60F A9H
○R
General Description：
CS8N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 8 45 0.
8
performance and enhance the avalanche energy.
The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤1.
2Ω) l Low Gate Charge (Typical Data:29nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test
Application...