BLF10H6600P; BLF10H6600PS
Power LDMOS
transistor
Rev.
2 — 20 June 2013
Product data sheet
1.
Product profile
1.
1 General description
A 600 W LDMOS RF power
transistor for transmitter applications and industrial applications.
The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1.
Application information
Test signal
f (MHz)
PL(AV) (W)
PL(M) (W)
Gp D IMD3 (dB) (%) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB pulsed, class-AB
f1 = 860; f2 = 860.
1 860
250 -
20.
8 46 32
- 600 19.
8 58 -
1.
2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum t...