BLF183XR; BLF183XRS
Power LDMOS
transistor
Rev.
2 — 22 May 2015
Product data sheet
1.
Product profile
1.
1 General description
A 350 W extremely rugged LDMOS power
transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1.
Application information
Test signal
f
(MHz)
pulsed RF
108
CW 88 to 108
pulsed RF
30 to 512
CW 30 to 512
VDS (V) 50 50 50 35
PL (W) 350 388 400 193
Gp (dB) 28 26 15 14
D (%) 75 80 48 47
1.
2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding...