BLF574XR; BLF574XRS
Power LDMOS
transistor
Rev.
1 — 20 June 2013
Product data sheet
1.
Product profile
1.
1 General description
A 600 W extremely rugged LDMOS power
transistor for broadcast and industrial applications in the HF to 500 MHz band.
This product is an enhanced version of the BLF574 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
Table 1.
Application information
Test signal
f
(MHz)
CW 225
pulsed RF
225
VDS
PL
Gp
(V) (W) (dB)
50 600 23.
5
50 600 24
D (%) 74.
5 74.
7
1.
2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness High efficienc...