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Part Number
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JANSR2N7471T1 |
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Manufacturer
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International Rectifier |
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Description
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RADIATION HARDENED POWER MOSFET |
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Published
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Jan 27, 2016 |
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Detailed Description
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PD-95889D
IRHMS57160
RADIATION HARDENED
JANSR2N7471T1
POWER MOSFET
100V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
...
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Datasheet
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JANSR2N7471T1
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Overview
PD-95889D
IRHMS57160
RADIATION HARDENED
JANSR2N7471T1
POWER MOSFET
100V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/698
5 TECHNOLOGY
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57160 100K Rads (Si) 0.
013Ω 45A* JANSR2N7471T1
IRHMS53160 300K Rads (Si) 0.
013Ω 45A* JANSF2N7471T1
IRHMS54160 500K Rads (Si) 0.
013Ω 45A* JANSG2N7471T1 IRHMS58160 1000K Rads (Si) 0.
014Ω 45A* JANSH2N7471T1
Low-Ohmic TO-254AA
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
T...
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