Part Number
|
JANSR2N7476T1 |
Manufacturer
|
International Rectifier |
Description
|
RADIATION HARDENED POWER MOSFET |
Published
|
Jan 27, 2016 |
Detailed Description
|
PD - 94765
IRHMS57260SE
RADIATION HARDENED
JANSR2N7476T1
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254A...
|
Datasheet
|
JANSR2N7476T1
|
Overview
PD - 94765
IRHMS57260SE
RADIATION HARDENED
JANSR2N7476T1
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/685
5 TECHNOLOGY
Part Number
Radiation Level RDS(on) ID QPL Part Number
IRHMS57260SE 100K Rads (Si) 0.
044Ω 45A JANSR2N7476T1
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination
of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all o...
Similar Datasheet