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Part Number
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MTB010N06I3 |
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Manufacturer
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CYStech Electronics |
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Description
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N-Channel Enhancement Mode Power MOSFET |
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Published
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Jan 27, 2016 |
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Detailed Description
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CYStech Electronics Corp.
Spec. No. : C137I3 Issued Date : 2015.05.05 Revised Date : Page No. : 1/ 8
N-Channel Enhance...
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Datasheet
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MTB010N06I3
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Overview
CYStech Electronics Corp.
Spec.
No.
: C137I3 Issued Date : 2015.
05.
05 Revised Date : Page No.
: 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB010N06I3
BVDSS ID@VGS=10V, TC=25°C
60V 50A
RDS(ON)@VGS=10V, ID=30A 9.
8 mΩ(typ)
RDS(ON)@VGS=4.
5V, ID=15A 12.
8 mΩ(typ)
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package
Symbol
MTB010N06I3
Outline
TO-251
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB010N06I3-0-UA-G
TO-251 (Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant produc...
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