DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D071
BFG590; BFG590/X
NPN 5 GHz wideband
transistors
Product specification Supersedes data of 1995 Sep 19
1998 Oct 02
Philips Semiconductors
NPN 5 GHz wideband
transistors
Product specification
BFG590; BFG590/X
FEATURES
• High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.
APPLICATIONS
• MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial
transistor in a 4-pin dual-emitter SOT143B plastic package.
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