DatasheetsPDF.com

1SS402

Part Number 1SS402
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS402 High Speed Switching Applications 1SS402 Unit in mm z Two...
Datasheet 1SS402




Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS402 High Speed Switching Applications 1SS402 Unit in mm z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities.
z Low forward voltage : VF (3) = 0.
50V (typ.
) z Low reverse current : IR= 0.
5μA (max) z Small total capacitance : CT = 3.
9pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge Current (10ms) Power dissipation Junction temperature Storage temperature range VRM VR IFM IO IFSM P Tj Tstg 25 V 20 V 100 * mA 50 * mA 1...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)