UNISONIC TECHNOLOGIES CO.
, LTD UT2N10 2.
0A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.
it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages.
The UTC UT2N10 is universally applied in logic level (5V) driving sources, such as automotive switching, solenoid drivers and programmable controllers.
 FEATURES * RDS(ON) ≤ 0.
32 Ω @ VGS =10V, ID =2.
0A RDS(ON) ≤ 0.
38 Ω @ VGS =4.
5V, ID =2.
0A * Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * SOA is Power Dissipa...

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