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CHA5115-99F

Part Number CHA5115-99F
Manufacturer United Monolithic Semiconductors
Description X-band Medium Power Amplifier
Published Feb 2, 2016
Detailed Description CHA5115-99F RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a ...
Datasheet CHA5115-99F




Overview
CHA5115-99F RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.
The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression.
This device is manufactured using 0.
25µm Power pHEMT process, including, via holes through the substrate and air bridges.
It is available in chip form.
IN Vg Vd1 Vd2 OUT Main Features  0.
25µm Power pHEMT Technology  Frequency band: 8-12GHz  Output power: 29dBm @ 3dBcomp  Linear gain: 25dB  High PAE: 39% @ 3dBcomp  Noise Factor: 5dB typ.
 Quiescent bias point: Vd=8V, Id=0.
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