Part Number
|
CHA5115-99F |
Manufacturer
|
United Monolithic Semiconductors |
Description
|
X-band Medium Power Amplifier |
Published
|
Feb 2, 2016 |
Detailed Description
|
CHA5115-99F
RoHS COMPLIANT
X-band Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5115-99F is a ...
|
Datasheet
|
CHA5115-99F
|
Overview
CHA5115-99F
RoHS COMPLIANT
X-band Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.
The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression.
This device is manufactured using 0.
25µm Power pHEMT process, including, via holes through the substrate and air bridges.
It is available in chip form.
IN
Vg Vd1 Vd2
OUT
Main Features
0.
25µm Power pHEMT Technology Frequency band: 8-12GHz Output power: 29dBm @ 3dBcomp Linear gain: 25dB High PAE: 39% @ 3dBcomp Noise Factor: 5dB typ.
Quiescent bias point: Vd=8V, Id=0.
1...
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