PD -94915A
IRG4IBC20FDPbF
INSULATED GATE BIPOLAR
TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Very Low 1.
66V votage drop
• 2.
5kV, 60s insulation voltage
• 4.
8 mm creapage distance to heatsink
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20
G
kHz in resonant mode).
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
E
n-channel
• Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM
outline
• Lead-Free
Fast CoPack IGBT
VCES = 600V VCE(on) typ.
= 1.
66V @VGE = 15V, IC = 9.
0A
Benefits
• Simplified assembly • Highest efficiency and power density • HEXFREDTM antiparallel Diode ...