PD - 95556
IRG4PC30FDPbF
INSULATED GATE BIPOLAR
TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free
G
E
n-channel
Fast CoPack IGBT
VCES = 600V VCE(on) typ.
= 1.
59V @VGE = 15V, IC = 17A
Benefits
Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditi...