PD - 94924
IRG4PC30WPbF
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
Industry-benchmark switching losses improve efficiency of all power supply topologies
50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability Lead-Free
C
G E
n-channel
Benefits
VCES = 600V VCE(on) max.
= 2.
70V
@VGE = 15V, IC = 12A
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
Of particular benefit to single-ended converters and boo...