PD -95430
INSULATED GATE BIPOLAR
TRANSISTOR
IRG4PC40FPbF
Fast Speed IGBT
Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package Lead-Free
C
G E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
VCES = 600V VCE(on) typ.
= 1.
50V
@VGE = 15V, IC = 27A
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100...