IRG7PG35UPbF IRG7PG35U-EPbF
INSULATED GATE BIPOLAR
TRANSISTOR
Features Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead-free package
C
G E
n-channel C
VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C
VCE(ON) typ.
= 1.
9V@ IC = 20A
C
Benefits
High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to low
VCE(on) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operation
Applications
U.
P.
S.
Welding ...