DMN53D0LQ
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Product Summary
BVDSS 50V
RDS(ON)
1.
6Ω @ VGS = 10V 2.
5Ω @ VGS = 4.
5V
ID TA = +25°C
500mA 200mA
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
SOT23
Features and Benefits
Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
“Green” Device (Note 3) The DMN53D0LQ is suitable for automo...