DMN601VKQ
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Product Summary
BVDSS 60V
RDS(ON) Max 2Ω @ VGS = 10V 3Ω @ VGS = 4.
5V
ID Max TA = +25°C
305mA
249mA
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications.
It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:
General-purpose interfacing switches Power-management functions Analog switches
Features and Benefits
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface-Mount Package Totally Lead-Free & Fully RoHS Compliant (Not...