IGC136T170S8RH2 IGBT3 Power Chip Features:  1700V Trench & Field stop technology  low switching losses and saturation losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  power modules Applications:  drives C G E Chip Type VCE ICn1 ) Die Size Package IGC136T170S8RH2 1700V 117.
5A 17.
72 x 7.
7 mm2 sawn on foil 1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization Mechanical Parameters Die size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside P...

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