Part Number
|
IGC89T170S8RM |
Manufacturer
|
Infineon |
Description
|
IGBT |
Published
|
Feb 7, 2016 |
Detailed Description
|
IGC89T170S8RM
IGBT3 Power Chip
Features: 1700V Trench + Field stop technology low switching losses soft turn off ...
|
Datasheet
|
IGC89T170S8RM
|
Overview
IGC89T170S8RM
IGBT3 Power Chip
Features: 1700V Trench + Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling
This chip is used for: power modules
Applications: drives
Chip Type
VCE
IC
IGC89T170S8RM 1700V 75A
Die Size 8.
85 x 10.
09 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
8.
85 x 10.
09
6.
634 x 7.
874 1.
674 x 0.
899
mm2
89.
3
190 µm
200 mm
280
Photoimide
3200 nm AlSiC...
Similar Datasheet