DatasheetsPDF.com

IGC89T170S8RM

Part Number IGC89T170S8RM
Manufacturer Infineon
Description IGBT
Published Feb 7, 2016
Detailed Description IGC89T170S8RM IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses  soft turn off ...
Datasheet IGC89T170S8RM





Overview
IGC89T170S8RM IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC IGC89T170S8RM 1700V 75A Die Size 8.
85 x 10.
09 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 8.
85 x 10.
09 6.
634 x 7.
874 1.
674 x 0.
899 mm2 89.
3 190 µm 200 mm 280 Photoimide 3200 nm AlSiC...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)