IGC99T120T6RM IGBT4 Medium Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules Applications: • medium power drives C G E Chip Type VCE ICn Die Size IGC99T120T6RM 1200V 100A 10.
39 x 9.
5 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 10.
39 x 9.
5 7.
987 x 8.
923 1.
31 x 0.
811 mm 2 98...

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