SEMICONDUCTOR
TECHNICAL DATA
KF10N50P/F/PZ/FZ
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.
65 @VGS=10V Qg(typ.
)= 19.
5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL KF10N50P KF10N50F UNIT
KF10N50PZ KF10N50FZ
Drain-Source Voltage
VDSS 500 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy...