SEMICONDUCTOR
TECHNICAL DATA
KF70N06P/F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
It’s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications
FEATURES VDSS= 60V, ID= 70A (KF70N06P) Drain-Source ON Resistance : RDS(ON)=12m (Max.
) @VGS = 10V
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF70N06P KF70N06F
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGSS
20
Drain Current
@TC=25 @TC=100
70 ID*
44
41 25
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
IDP EAS EAR ...